Selected Book/Encyclopedia Chapters and Reviews
  1. "Modeling and Simulation of Strain-Mediated Nanostructure Formation on Surface", Feng Liu, in "Handbook of Theoretical and Computational Nanotechnology", eds. M. Rieth and W. Schommers, Chapter 10, 577-625 (2006). [Abstract] [Read]
  2. “Surfaces and Interfaces, Structure of”, Feng Liu, M. Hohage, and M.G. Lagally, Encyclopedia of Appl. Phys., eds. H. Immergut and G. Trigg, Supplement Volume, 321-352 (1999). [Abstract] [Read]

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This book chapter provides an overview of the progress made in the last decade on theoretical modeling and computer simulation of strain-mediated formation of nanostructures on surface, focusing on strain-induced self-assembly and self-organization of two-dimensional patterns and structures. As part of a handbook, the main objective is to provide a general introduction of the basic concepts and physical models along with some relatively detailed discussion of mathematical derivations and technical treatments so that readers, especially graduate students who are interested in this topic can use this chapter as a guide and reference to start their own modeling and simulation.

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This encyclopedia article gives an overview of basic concepts and fundamental principles underlying the structure of solid surfaces and interfaces. A brief discussion of surface thermodynamics is provided in the context of the Gibbs model, and the relationship between surface stress and surface tension for a solid surface is established. Basic definitions and notations of surface crystallography are introduced for the description of structures of single-crystal surfaces. Surface relaxation and surface reconstruction are discussed in detail and illustrated with examples of semiconductor and metal surfaces. Underlying physical mechanisms relating the atomic structure to the electronic structure are summarized. A qualitative description of the morphology of real surfaces, interfaces, and thin films is provided.

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Selected Recent Publications
  1. “Theory of Directed Nucleation of Strained Islands on Patterned Substrates” H. Hu, H.J. Gao and Feng Liu, Phys. Rev. Lett. 101, 216102 (2008). (pdf)
  2. “Dual-surfactant effect on enhancing p-type doping in III-V semiconductor thin films” Junyi Zhu, Feng Liu, G.B. Stringfellow, Phys. Rev. Lett. 101, 196103 (2008). (pdf)
  3. “Synthesis of Carbon Nanotubes by Rolling Up Patterned Graphene Nanoribbons Using Selective Atomic Adsorption”, Decai Yu and Feng Liu, Nano Lett. 7, 3046 (2007). (pdf)
  4. “Mechanism for Nanotube Formation from Self-Bending Nanofilms Driven by Atomic-Scale Surface-Stress Imbalance”, Ji Zang, Minghuang Huang, and Feng Liu, Phys. Rev. Lett. 98, 146102 (2007). (pdf)
  5. “Quantum Size Effect on Adatom Surface Diffusion”, Li-Ying Ma, Lin Tang, Ze-Lei Guan, Ke He, An Kang, Xu-Cun Ma, Jin-Feng Jia, Qi-Kun Xue, Steve Huang, and Feng Liu, Phys. Rev. Lett. 97, 266102 (2006). (pdf)
  6. “Surface Mobility Difference between Si and Ge and its Effect on Growth of SiGe Alloy Films and Islands”, Li Huang, Feng Liu, Guang-Hong Lu and X. G. Gong, Phys. Rev. Lett. 96, 016103 (2006). (pdf)
  7. “Nanomechanical Architecture of Strained Bilayer Thin Films: from design principles to experimental fabrication”, Minghuang Huang, C. Boone, M. Roberts, D. E. Savage, M. G. Lagally, N. Shaji, H. Qin, R. Blick, J. A. Nairn, and Feng Liu, Adv. Mater. 17, 2860 (2005). (pdf)
  8. “Towards Quantitative Understanding of Formation and Stability of Ge Hut Island on Si(001)”, G.H. Lu and Feng Liu, Phys. Rev. Lett 94, 176103 (2005).(pdf)
  9. “Self-Organized Quantum-Wire Lattice via Step Flow Growth of a Short-Period Superlattice”, L. Bai, J. Tersoff, and Feng Liu, Phys. Rev. Lett. 92, 225503 (2004). (pdf)
  10. “Geometry Constant Defining Shape Transitions of Carbon Nanotubes under Pressure”, Ji Zang, Andrejs Treibergs, Y. Han, and Feng Liu, Phys. Rev. Lett. 92, 105501 (2004). (pdf)
Complete Publications
  1. “Theory of Directed Nucleation of Strained Islands on Patterned Substrates” H. Hu, H.J. Gao and Feng Liu, Phys. Rev. Lett. 101, 216102 (2008).
  2. “Dual-surfactant effect on enhancing p-type doping in III-V semiconductor thin films” Junyi Zhu, Feng Liu, G.B. Stringfellow, Phys. Rev. Lett. 101, 196103 (2008).
  3. “Highly Ordered, Millimeter-Scale, Continuous, Single-Crystalline Graphene Monolayer Formed on Ru (0001)”, Y. Pan, H. Zhang, D. Shi, J. Sun, S. Du, Feng Liu, H.-J. Gao, Adv. Mat. 20, 1 (2008).
  4. “First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility”, D. Yu, Yu Zhang, and Feng Liu, Phys. Rev. B 78, 245204 (2008).
  5. “Magnetism in Nanopatterned Graphite Film”, L. Chen, D. Yu, Feng Liu, Appl. Phys. Lett. 93, 223106 (2008).
  6. “Unified Design Rule for Nanomagnetism in Graphene”, D. Yu, E. M. Lupton, H.J. Gao, C. Zhang and Feng Liu, Nano Res. 1, 497 (2008).
  7. “Enhanced growth instability of a strained film on a wavy substrate”, Hangyao Wang, Yu Zhang, and Feng Liu, J. Appl. Phys. 104, 054301 (2008).
  8. “Collective Magnetic Behavior of Graphene Nanohole Superlattices”, D. Yu, E. M. Lupton, M. Liu, W. Liu and Feng Liu, Nano Res. 1, 56 (2008).
  9. “Flat-surface, step-edge, facet-facet, and facet-step diffusion barriers in growth of a Pb mesa”, Y. Han, G.-H. Lu, B.-J. Lee and Feng Liu, Surf. Sci. 602, 2284 (2008).
  10. “The role of vacancy on trapping interstitial O in heavily As-doped Si”, G.H. Lu, Q. Wang and Feng Liu, Appl. Phys. Lett. 92, 211906 (2008).
  11. “Suppression of spin-polarization in graphene nanoribbon by edge defect and impurity”, Bing Huang, Feng Liu, Jian Wu, Bing-Lin Gu, and Wenhui Duan, Phys. Rev. B 77, 153411 (2008).
  12. “Coulomb sink effect on coarsening of metal nanostructures on surfaces”, Y. Han and Feng Liu, Front. Phys. China, 3, 41 (2008). (Invited review).
  13. “Kinetics of Mesa Overlayer Growth: Climbing of adatoms onto the mesa top”, Y. Han, Feng Liu, S.-C. Li, J.-F. Jia, Q.-K. Xue, and B.-J. Lee, Appl. Phys. Lett. 92, 021909 (2008).
  14. “Modified Timoshenko formula for bending of ultrathin strained bi-layer films”, Ji Zang and Feng Liu, Appl. Phys. Lett. 92, 021905 (2008).
  15. “Quantum modulation of island nucleation on top of a metal nanomesa”, Y. Han, M. Hupalo, M. C. Tringides, and Feng Liu, Surf. Sci. 602, 62 (2008).
  16. “Making a field effect transistor on a single graphene nanoribbon by selective doping”, Bing Huang, Qimin Yan, Gang Zhou, Jian Wu, Bing-Lin Gu, Wenhui Duan, and Feng Liu, Appl. Phys. Lett. 91, 253122 (2007).
  17. “Synthesis of Carbon Nanotubes by Rolling Up Patterned Graphene Nanoribbons Using Selective Atomic Adsorption”, Decai Yu and Feng Liu, Nano Lett. 7, 3046 (2007).
  18. “Bending of Si Nano-Cantilever Induced by Molecular Adsorption: A Modified Stoney Formula for the Calibration of Nanomechanochemical Sensors”, Ji Zang and Feng Liu, Nanotechnology, 18, 405501 (2007).
  19. “Confining P diffusion in Si by an As-doped barrier layer”, Lugang Bai, Decai Yu, Guang-Hong Lu, Feng Liu, Q. Wang, and Hamza Yilmaz, Appl. Phys. Lett. 91, 061926 (2007).
  20. “First-Principles Study of Adsorption and Diffusion on Ge/Si(001)-(2X8) and Ge/Si(105)-(1X2) Surfaces”, Li Huang, Guang-Hong Lu, Feng Liu, and X. G. Gong, Surf. Sci. 601, 3067 (2007).
  21. “Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping”, Q. Yan, B. Huang, J. Yu, F. Zheng, J. Zang, J. Wu, B. Gu, Feng Liu, and W. Duan, Nano Lett. 7, 1469 (2007).
  22. “Mechanism for Nanotube Formation from Self-Bending Nanofilms Driven by Atomic-Scale Surface-Stress Imbalance”, Ji Zang, Minghuang Huang, and Feng Liu, Phys. Rev. Lett. 98, 146102 (2007).
  23. “MD simulation of structural and mechanical transformation of single-walled carbon nanotubes under pressure”, J. Zang, O. Aldás-Palacios and Feng Liu, Commun. Comput. Phys. 2, 451 (2007). (invited review).
  24. “First-principles calculation of interaction between interstitial O and As dopant in heavily As-doped Si”, G.H. Lu, Qi Wang and Feng Liu, J. Appl. Phys. 101, 026104 (2007).
  25. “Impurity mediated absorption continuum in single-walled carbon nanotubes”, C. Zhang, J.C. Chao, X.G. Guo and Feng Liu, Appl. Phys. Lett. 90, 023106 (2007).
  26. “Nucleation-Mediated Lateral Growth on Foreign Substrate”, D.J. Shu, M. Wang, Feng Liu, Z. Zhang, R.W. Peng, R. Zhang, N.B. Ming, J. Phys. Chem. C, 111, 1071 (2007).
  27. “Directed Self-assembly of Quantum Dots by Local-Chemical-Potential control via Strain Engineering on Patterned Substrates”, Hangyao Wang, Feng Liu, and M. Lagally, in “Lateral Alignment of Epitaxial Quantum Dots”, Ed., O. Schmidt, Springer, Chapter 20, page 524 (2007). (invited chapter).
  28. “Quantum Size Effect on Adatom Surface Diffusion”, Li-Ying Ma, Lin Tang, Ze-Lei Guan, Ke He, An Kang, Xu-Cun Ma, Jin-Feng Jia, Qi-Kun Xue, Steve Huang, and Feng Liu, Phys. Rev. Lett. 97, 266102 (2006).
  29. “Determination of the Ehrlich-Schwoebel barrier in epitaxial growth of thin films”, S.-C. Li, Y. Han, J.-F. Jia, Q.-K. Xue, and Feng Liu, Phys. Rev. B 74, 195428 (2006).
  30. “Nature of reactive O2 and slow CO2 evolution kinetics in CO oxidation by TiO2 supported Au cluster”, R. Pala and Feng Liu, J. Chem. Phys. 125, 144714 (2006).
  31. “Fabricating artificial nanowells with tunable size and shape by using scanning tunneling microscopy”, S.-C. Li, J.-F. Jia, X. Ma, Q.-K. Xue, Y. Han, and Feng Liu, Appl. Phys. Lett. 89, 123111(2006).
  32. “Intrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy: A conductance transition of ZnO nanowire”, X. Lin, X.B. He, T.Z. Yang, W. Guo, D.X. Shi, H.-J. Gao, D.D. Ma, S.T. Lee, Feng Liu, and X.C. Xie, Appl. Phys. Lett. 89, 043103(2006).
  33. “Influence of quantum size effects on Pb island growth and diffusion barrier oscillations”, S. Li, X. Ma, J.F. Jia, Y.F. Zhang, Q. Niu, Feng Liu, D. Chen, P.S. Weiss, and Q.K. Xue, Phys. Rev. B 74, 075410 (2006).
  34. “Pressure-Induced Transition in Magnetoresistance of Single-walled Carbon Nanotubes”, J. Z. Cai, L. Lu, H. W. Zhu, C. Zhang, B. Q. Wei, D. H. Wu, and Feng Liu, Phys. Rev. Lett. 97, 026402 (2006).
  35. “Origin of intergranular embrittlement of Al alloys induced by Na and Ca segregation: Grain boundary weakening”, G.H. Lu, Y. Zhang, S. Deng, T. Wang, M. Kohyama, R. Yamamoto, Feng Liu, K. Horikawa, and M. Kanno, Phys. Rev. B 73, 224115 (2006).
  36. “Surface Mobility Difference between Si and Ge and its Effect on Growth of SiGe Alloy Films and Islands”, Li Huang, Feng Liu, Guang-Hong Lu and X. G. Gong, Phys. Rev. Lett. 96, 016103 (2006).
  37. “Modeling and Simulation of Strain-Mediated Nanostructure Formation on Surface”, Feng Liu, in “Handbook of Theoretical and Computational Nanotechnology”, eds. M. Rieth and W. Schommers, Chapter 10, 577-625 (2006). (invited chapter).
  38. “Quantitative Prediction of Critical Size for the Formation of Semiconductor Quantum Dots”, G.H. Lu and Feng Liu, in “Physics, J. Chinese Phys. Association”, 35, 447 (2006). (invited review).
  39. “Self-organization of Semiconductor Nanocrystals by Selective Surface Faceting”, B. Yang, P. Zhang, D.E. Savage, M. Lagally, G.H. Lu, M.H. Huang, and Feng Liu, Phys. Rev. B 72, 235413 (2005).
  40. “Nanomechanical Architecture of Strained Bilayer Thin Films: from design principles to experimental fabrication”, Minghuang Huang, C. Boone, M. Roberts, D. E. Savage, M. G. Lagally, N. Shaji, H. Qin, R. Blick, J. A. Nairn, and Feng Liu, Adv. Mater. 17, 2860 (2005).
  41. “Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond", Hao Chang, Jian Wu, Bing-Lin Gu, Feng Liu, and Wenhui Duan, Phys. Rev. Lett. 95, 196803 (2005).
  42. “Critical Epinucleation on Reconstructured Surfaces and First-Principle Calculation of Homonucleation on Si(100)”, Raj Ganesh S. Pala and Feng Liu, Phys. Rev. Lett. 95, 136106 (2005).
  43. “First-principles study of strain stabilization of Ge(105) facet on Si(001)”, G.H. Lu, Martin Cuma, and Feng Liu, Phys. Rev. B 72, 125415 (2005).
  44. “Bending of Nanoscale Ultrathin Substrates by Growth of Strained Thin Films and Islands”, M.H. Huang, P. Rugheimer, M.G. Lagally, and Feng Liu, Phys. Rev. B 72, 085450 (2005).
  45. “Mechanical stability of ultrathin Ge/Si film on SiO2: The effect of Si/SiO2 interface”, M.H. Huang, J.A. Nairn, Feng Liu, and M.G. Lagally, J. Appl. Phys. 97, 116108 (2005).
  46. “Relative stability of Si surfaces: a first-principles study”, G.H. Lu, M.H. Huang, M. Cuma, and Feng Liu, Surf. Sci. 588, 61 (2005).
  47. “Towards Quantitative Understanding of Formation and Stability of Ge Hut Island on Si(001)”, G.H. Lu and Feng Liu, Phys. Rev. Lett 94, 176103 (2005).
  48. “Computational R&D for Industrial Applications”, Feng Liu, News Article of Center for High-Performance Computing, University of Utah, Fall issue, p. 1 (2005). (invited article).
  49. “Pattern Formation on Silicon-on-Insulator”, F. Flack, B. Yang, M. Huang, M. Marcus, J. Simmons, O.M. Castellini1, M.A. Eriksson, Feng Liu and M.G. Lagally, MRS Proceeding. 849, KK1.3.1/JJ1.3.1/U1.3.1 (2005).
  50. “Computational Study of Metal Adsorption on TiO2 (110) Surface”, R. S. Pala, T. N. Truong, and Feng Liu, in “Clusters and Nano-Assemblies”, World Scientific, eds. P. Jena, S.N. Khanna, and B.K. Rao, 135 (2005). (invited paper).
  51. “Theory of Equilibrium Shape of an Anisotropically Strained Island: Thermodynamic Limits for Growth of Nanowires”, Amit Pradhan, N.-Y. Ma and Feng Liu, Phys. Rev. B 70, 193405 (2004).
  52. “Pressure Induced Hard-to-Soft Transition of a Single Carbon Nanotube”, D.Y. Sun, D.J. Shu, M. Ji, Feng Liu, M. Wang, and X.G. Gong, Phys. Rev. B 70, 165417 (2004).
  53. “Strain effect on adatom binding and diffusion in homo- and heteroepitaxies of Si and Ge on (001) Surfaces”, L. Huang, Feng Liu, and X. G. Gong, Phys. Rev. B 70, 155320 (2004).
  54. “Coulomb Sink: a novel Coulomb effect on coarsening of metal nanoclusters on semiconductor surface”, Y. Han, J.Y. Zhu, Feng Liu, S.C. Li, J.F. Jia, Y.F. Zhang, and Q.K. Xue, Phys. Rev. Lett. 93, 106102 (2004).
  55. “A Novel Analytical Scheme to Compute the n-fold Convolution of Exponential-Sum Distribution Functions”, N.Y. Ma and Feng Liu, Appl. Math. Comput. 158, 225 (2004).
  56. “Self-Organized Quantum-Wire Lattice via Step Flow Growth of a Short-Period Superlattice”, L. Bai, J. Tersoff, and Feng Liu, Phys. Rev. Lett. 92, 225503 (2004).
  57. “Computational Designing of Carbon Nanotube Electromechanical Pressure Sensors”, J. Wu, Ji Zang, B. Larade, H. Guo, X.G. Gong, and Feng Liu, Phys. Rev. B 69, 153406 (2004).
  58. “Determining the Adsorptive and Catalytic Properties of Strained Metal Surfaces using Adsorption-induced Stress”, R. Pala and Feng Liu, J. Chem. Phys. 120, 7720 (2004).
  59. “Geometry Constant Defining Shape Transitions of Carbon Nanotubes under Pressure”, Ji Zang, Andrejs Treibergs, Y. Han, and Feng Liu, Phys. Rev. Lett. 92, 105501 (2004).
  60. “Local-Strain-Mediated-Chemical-Potential Control of Quantum Dot Self-Organization in Heteroepitaxy”, Bin Yang, Feng Liu and Max G. Lagally, Phys. Rev. Lett. 92, 025502 (2004).
  61. “Directed Assembly and Strain Engineering of SiGe Films and Nanostructures”, M.G. Lagally, M.A. Eriksson, Z.Q. Ma, Feng Liu, G. Celler, L.J. Klein, D.E. Savage, K. Slinker, M. M. Roberts, B. Yang, P.P. Zhang, and M.-H. Huang, Electrochem. Soc. Proceedings, eds. D. Harame et al., Vol. 2004-7, P. 1153 (2004).
  62. “Bending of Nanoscale Thin Si Film Induced by Growth of Ge Islands: Hut vs. Dome”, M.H. Huang, M. Cuma, M.G. Lagally and Feng Liu, MRS Proceeding, 791, Q6.4.1-6 (2004).
  63. “Seeing the Atomic Orbital: first-principles study of effect of tip termination on atomic force microscopy”, M. Huang, M. Cuma, and Feng Liu, Phys. Rev. Lett. 90, 256101 (2003).
  64. “Metal-to-semiconductor Transition in Squashed Armchair Carbon Nanotubes”, J.Q. Lu, J. Wu, W. Duan, Feng Liu, B.F. Zhu, and B.L. Gu, Phys. Rev. Lett. 90, 156601 (2003).
  65. “The Effect of Island-island Interaction on Coarsening of Strained Islands”, Feng Liu, Jpn. J. Appl. Phys. 42, No. 7B (2003). (invited review).
  66. “Self-Assembly of Three Dimensional Metal Islands: strained vs. nonstrained islands”, Feng Liu, Phys. Rev. Lett. 89, 246105 (2002).
  67. “Nanostressors and the Nanomechanical Response of a Thin Silicon Film on Insulator”, Feng Liu, M. Huang, P. Rugheimer, D. E. Savage, and M. G. Lagally, Phys. Rev. Lett. 89, 136101 (2002).
  68. “Nanomechanics: Response of a Strained Semiconductor Structure”, Feng Liu, P. Rugheimer, E. Mateeva, D. E. Savage, and M. G. Lagally, Nature 416, 498 (2002).
  69. “Self-Organized Nanoscale Pattern Formation on Vicinal Si(111) Surfaces via a Two-Stage Faceting Transition”, F.-K Men, Feng Liu, P.J. Wang, C.H. Chen, D.L. Cheng, J.L. Lin, and F.J. Himpsel, Phys. Rev. Lett. 88, 096105 (2002).
  70. “Step-Induced Magnetic Hysteresis Anisotropy in Ferromagnetic Thin Films”, D. Zhao, Feng Liu, D.L. Huber, and M.G. Lagally, J. Appl. Phys. 91, 3150 (2002).
  71. “Simple Generic Method for Predicting the Effect of Strain on Surface Diffusion”, D.J. Shu, Feng Liu, and X.G. Gong, Phys. Rev. B, 64, 245410 (2001).
  72. “Surface Stress-Induced Island Shape Transition in Si(001) Homoepitaxy”, V. Zielasek, Feng Liu, Yuegang Zhao, J.B. Maxson, and M.G. Lagally, Phys. Rev. B (rapid communication), 64, R201320 (2001).
  73. “Self-assembly of two-dimensional islands via strain-mediated coarsening”, Feng Liu, Adam H. Li, and M.G. Lagally, Phys. Rev. Lett. 87, 126103 (2001).
  74. “Pattern Formation via A Two-Step Surface Faceting Transition on Vicinal Si(111) Surfaces”, F.-K Men and Feng Liu, MRS Proceeding, 648, P1.7.1-6 (2001).
  75. “Self-Organized Formation of Nanostructures in Strained Thin Films”, Feng Liu, Proceeding of 8th International Conference on Composite Engineering, ed. D. Hui, P. 581 (2001).
  76. “Unique Dynamic Appearance of a Ge-Si Ad-dimer on Si(001)”, Z.Y. Lu, Feng Liu, C.Z. Wang, X.R. Qin, B.S. Swartzentruber, M.G. Lagally, and K.M. Ho, Phys. Rev. Lett. 85, 5603 (2000).
  77. “Creation of “Quantum Platelets” via Strain-Controlled Self-Organization at Steps”, Adam H. Li, Feng Liu, D.Y. Petrovykh, J.-L. Lin, J. Viernow, F.J. Himpsel, and M.G. Lagally, Phys. Rev. Lett. 85, 5380 (2000).
  78. “Magnetization on Rough Ferromagnetic Surfaces”, D. Zhao, Feng Liu, D.L. Huber, and M.G. Lagally, Phys. Rev. B 62, 11316 (2000).
  79. “Thermal Roughening of a Thin Film: A New Type of Roughening Transition”, J.B. Maxson, D.E. Savage, R. Tromp, M. Reuter, Feng Liu, and M.G. Lagally, Phys. Rev. Lett. 85, 2152 (2000).
  80. “Equilibrium Shape of Two-dimensional Islands Under Stress”, Adam H. Li, Feng Liu, and M.G. Lagally, Phys. Rev. Lett. 85, 1922 (2000).
  81. “First-Principles Study of Impurity Segregation in Edge Dislocations in Si”, T. Kaplan, Feng Liu, M. Mostoller, M.F. Chisholm, and V. Milman, Phys. Rev. B 61, 1674 (2000).
  82. “Reconstruction of Si(001), (111), and (110) Surfaces”, V. Zielasek, Feng Liu, and M.G. Lagally, in “Properties of Crystalline Silicon”, the EMIS (Electronic Material Information Service) Datareviews, ed. R. Hull, Ch.5.1 (2000). (invited chapter).
  83. “Vicinal Si(001) and Si(111) Surfaces", V. Zielasek, F. Liu, and M.G. Lagally, in " Properties of Crystalline Silicon," EMIS (Electronic Material Information Service) Datareviews, ed. R. Hull, Ch.5.2 (2000). (invited chapter).
  84. “Strain, Morphology, and Self-organization in the Growth of Si/Ge Quantum Dot Nanoclusters”, Arthur R. Woll, J. Sullivan, Feng Liu, and Max G. lagally, in “ Cluster and Nanostructure Interfaces”, ed. P. Jena, S.N. Khanna, and B.K. Rao, 631-638 (World Scientific, 2000). (invited paper).
  85. “Self-Organized Replication of Coherent Island Size and Shape in Multilayer Heteroepitaxial Films”, Feng Liu, S.E. Davenport, H.M. Evans, and M.G. Lagally, Phys. Rev. Lett. 82, 2528 (1999).
  86. “Self-Organized Growth of Alloy Superlattices”, P. Venezuela, J. Tersoff, J.A. Floro, E. Chason, D.M. Follstaedt, Feng Liu, and M.G. Lagally, Nature 397, 678 (1999).
  87. “Step-Induced Optical Anisotropy of Vicinal Si(001)”, S.G. Jaloviar, Jia-Ling Lin, Feng Liu, V. Zielasek, L. McCaugham, and M.G. Lagally, Phys. Rev. Lett. 82, 791 (1999).
  88. “Strain Engineering of Nanoscale Structures in the Ge/Si system”, Feng Liu and M.G. Lagally, in “Precision Science and Technology for Perfect Surfaces”, eds. Y. Furukawa, Y. Mori, and T. Kataoka, Proceedings of the 9th International Conference on Production Engineering(ICPE9), Publication Series No. 3, Japan Society for Precision Engineering, Tokyo, Japan, 648 (1999). (invited paper).
  89. “Surfaces and Interfaces, Structure of”, Feng Liu, M. Hohage, and M.G. Lagally, Encyclopedia of Appl. Phys., eds. H. Immergut and G. Trigg, Supplement Volume, 321-352 (1999). (invited chapter).
  90. “Fundamental Crystal Growth Mechanisms”, D.E. Savage, Feng Liu, V. Zielasek, and M.G. Lagally, in “Semiconductors and Semimetals”, eds. J.C. Bean and R. Hull, Academic Press, 56, 49 (1999). (invited chapter).
  91. “Epitaxial Growth: Principles and Applications”, A. Barabasi, M. Krishnamurthy, Feng Liu, and T. Pearsall, MRS Proceedings, Vol. 570 (1999). (co-editor).
  92. “Hydrogen Induced Si Surface Segregation on Ge-Covered Si(001)”, E. Rudkevich, Feng Liu, D.E. Savage, T. Keuch, L. McCaughan, and M.G. Lagally, Phys. Rev. Lett. 81, 3467 (1998).
  93. “Strain-Induced Self-organization of Steps and Islands in SiGe/Si Multilayer Films”, Feng Liu and M.G. Lagally, Metallurgical and Materials Transactions 29A, 2111 (1998). (invited review).
  94. “Modification of Si(001) Substrate Bonding by Adsorbed Ge or Si Dimer Islands”, X.R. Qin, Feng Liu, B.S. Swartzentruber, and M.G. Lagally, Phys. Rev. Lett. 81, 2288 (1998).
  95. “Self-Organization of Steps in Growth of Strained Films on Vicinal Substrates”, Feng Liu, J. Tersoff, and M.G. Lagally, Phys. Rev. Lett. 80, 1268 (1998).
  96. “Self-organized Nanoscale Structures in Si/Ge Films”, Feng Liu and M.G. Lagally, Surf. Sci. 386, 169 (1997). (invited review).
  97. “Epitaxial Growth of Si on Si(001)”, Feng Liu and M.G. Lagally, in “The Chemical Physics of Solid Surfaces”, eds. D.A. King and D.P. Woodruff, Elsevier, 8, 258 (1997). (invited chapter).
  98. “(Bal12)Cs: A Cluster-Assembled Solid”, C. Ashman, S.N. Khanna, Feng Liu, P. Jena, T. Kaplan, and M. Mostoller, Phys. Rev. B 55, 15868 (1997).
  99. “Unique Edge Structure and Stability of Fabricated Dimer Islands on Si(001)”, Feng Liu, C.T. Salling, and M.G. Lagally, Surf. Sci. 370, L213 (1997).
  100. “Magnetization on Vicinal Ferromagnetic Surfaces”, D. Zhao, Feng Liu, D.L. Huber, and M.G. Lagally, in “Magnetic Ultrathin Films, Multilayers and Surfaces”, MRS Proc. 475, 519 (1997).
  101. “Interplay of Stress, Structure, and Stoichiometry in Ge-Covered Si(001)”, Feng Liu and M.G. Lagally, Phys. Rev. Lett. 76, 3156 (1996).
  102. “Evidence for a New Class of Solids: First-Principles Study of K(Al13)”, Feng Liu, M. Mostoller, T. Kaplan, S.N. Khanna, and P. Jena, Chem. Phys. Lett. 248, 213 (1996).
  103. “Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001)”, Feng Liu, Fang Wu, and M.G. Lagally, Chemical Reviews 97, 1045-1061 (1997) (invited review).
  104. “Self-Consistent Tight-binding Method”, Feng Liu, Phys. Rev. B 52, 10677 (1995). “Electronic and Elastic Properties of Edge Dislocations in Si”, Feng Liu, M. Mostoller, V. Milman, M.F. Chisholm, and T. Kaplan, Phys. Rev. B 51, 17192 (1995).
  105. “A Cluster-Assembled Solid: First-Principles Study of K(Al13)”, Feng Liu, M. Mostoller, T. Kaplan, S.N. Khanna, and P. Jena, in
  106. “Proceedings of the Science and Technology of Atomically Engineered Materials”, eds. P. Jena, S.N. Khanna, and B.K. Rao, 39 (1995).
  107. “A First-Principles Study of Crystalline Silica”, Feng Liu, S.H. Garofalini, R.D. King-Smith, and D. Vanderbilt, Phys. Rev. B 49, 12528 (1994).
  108. “Structural and Electronic Properties of Sodium Metasilicate”, Feng Liu, S.H. Garofalini, R.D. King-Smith, and D. Vanderbilt, Chem. Phys. Lett. 215, 401 (1993).
  109. Reply to comment on “First-Principles Studies on Structural Properties of Cristobalite” by I.P. Swainson and M.T. Dove, Feng Liu, S.H. Garofalini, R.D. King-Smith, and D. Vanderbilt, Phys. Rev. Lett. 71, 3611 (1993).
  110. “First-Principles Studies on Structural Properties of Cristobalite”, Feng Liu, S.H. Garofalini, R.D. King-Smith, and D. Vanderbilt, Phys. Rev. Lett. 70, 2750 (1993).
  111. “Magnetism of Al-Mn Quasicrystals”, Feng Liu, S.N. Khanna, L. Magaud, P. Jena, V. De Coulon, F. Reuse, S.S. Jaswal, X.G. He, and F. Cyrot-Lackman, Phys. Rev. B 48, 1295 (1993).
  112. “Theory of Hydrogen Pairing in Metals”, S.E. Weber, Feng Liu, S.N. Khanna, B.K. Rao, and P. Jena, The J. of Less-common Metals 172-174, 485 (1991).
  113. “Magnetism in Small Vanadium Clusters”, Feng Liu, S.N. Khanna, and P. Jena, Phys. Rev. B 43, 8179 (1991).
  114. “Quantum Size Effect on the Magnetism of Finite Systems”, Feng Liu, S.N. Khanna, and P. Jena, Phys. Rev. B 42, 976 (1990).
  115. “Effect of Size and Dimensionality on the Magnetic Moment of Transition Metals”, Feng Liu, S.N. Khanna, and P. Jena, J. Appl. Phys. 67, 4484 (1990).
  116. “Ab-inito Tight-Binding theory for the Electronic Structure”, Feng Liu, S.N. Khanna, and P. Jena, J. Non-crystal. Solid 117/118, 297 (1990).
  117. Reply to comment on “Theory of Hydrogen Pairing in Yttrium” by O. Blaschko, Feng Liu, M. Challa, S.N. Khanna, and P. Jena, Phys. Rev. Lett. 65, 1169 (1990).
  118. “Nature of Short Range Interaction between Deuterium Atoms in Pd”, Feng Liu, N.K. Rao, S.N. Khanna, and P. Jena, Solid State Commu. 72, 891 (1989).
  119. “Theory of Hydrogen Pairing in Yttrium”, Feng Liu, M. Challa, S.N. Khanna, and P. Jena, Phys. Rev. Lett. 63, 1396 (1989).
  120. “Magnetism and Local Order II: Self-consistent Cluster Calculation”, Feng Liu, M.R. Press, S.N. Khanna, and P. Jena, Phys. Rev. B, 40, 399 (1989).
  121. “Magnetism and Local Order: Ab-initio Tight-binding Theory”, Feng Liu, M.R. Press, S.N. Khanna, and P. Jena, Phys. Rev. B 39, 6914 (1989).
  122. “Magnetism and Local Order”, Feng Liu, M.R. Press, S.N. Khanna, and P. Jena, Z. Phys. D 12, 361 (1989).
  123. “Simple Theory of the Electronic Structure: Clusters to Crystals”, Feng Liu, M.R. Press, S.N. Khanna, and P. Jena, Phys. Rev. B 38, R5760 (1988).
  124. “Stability of Doubly Charged Transition Metal Dimers”, Feng Liu, M.R. Press, S.N. Khanna, and P. Jena, Phys. Rev. Lett. 59, 2562 (1987).
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