“Surface Mobility Difference between Si and Ge and its Effect on Growth of SiGe Alloy Films and Islands”, Li Huang, Feng Liu, Guang-Hong Lu and X. G. Gong, Phys. Rev. Lett 96, 016103 (2006). (pdf)
“Nanomechanical Architecture of Strained Bilayer Thin Films: from design principles to experimental fabrication”, Minghuang Huang, C. Boone, M. Roberts, D. E. Savage, M. G. Lagally, N. Shaji, H. Qin, R. Blick, J. A. Nairn and Feng Liu, Adv. Mater. 17, 2860 (2005). (pdf)
“Critical Epi-Nucleation on Reconstructed Surfaces and a Model Study of Si(001) Homoepitaxy”, Raj Ganesh S. Pala and Feng Liu, Phys. Rev. Lett 95, 136106 (2005). (pdf)
“Towards Quantitative Understanding of Formation and Stability of Ge Hut Island on Si(001)”, G.H. Lu and Feng Liu, Phys. Rev. Lett 94, 176103 (2005). Selected for Virtual J. of Nanoscale Sci. & Tech., 2005. (pdf)
“Coulomb Sink: a novel Coulomb effect on coarsening of metal nanoclusters on semiconductor surface”, Y. Han, J.Y. Zhu, Feng Liu, S.C. Li, J.F. Jia, Y.F. Zhang, and Q.K. Xue, Phys. Rev. Lett 93, 106102 (2004). Selected for Virtual J. of Nanoscale Sci. & Tech., 10(11), 2004. (pdf)
“Self-Organized Quantum-Wire Lattice via Step Flow Growth of a Short-Period Superlattice”, L. Bai, J. Tersoff, and Feng Liu, Phys. Rev. Lett 92, 225503 (2004). Selected for Virtual J. of Nanoscale Sci. & Tech., 9(23), 2004. (pdf)
“Geometry Constant Defining Shape Transitions of Carbon Nanotubes under Pressure”, Ji Zang, Andrejs Treibergs, Y. Han, and Feng Liu Phys. Rev. Lett 92, 105501 (2004). Selected for Virtual J. of Nanoscale Sci. & Tech., 9(11), 2004. (pdf)
“Local-Strain-Mediated-Chemical-Potential Control of Quantum Dot Self-Organization in Heteroepitaxy”, Bin Yang, Feng Liu and Max G. Lagally, Phys. Rev. Lett 92, 025502 (2004). Selected for Virtual J. of Nanoscale Sci. & Tech., 9(3), 2004 (pdf)
“Seeing the Atomic Orbital: first-principles study of effect of tip termination on atomic force microscopy”, M. Huang, M. Cuma, and Feng Liu, Phys. Rev. Lett 90, 256101 (2003). (pdf)
“Self-Assembly of Three Dimensional Metal Islands: strained vs. nonstrained islands”, Feng Liu, Phys. Rev. Lett 89, 246105 (2002). Selected for Virtual J. of Nanoscale Sci. & Tech., 6(23), 2002. (pdf)
“Nanostressors and the Nanomechanical Response of a Thin Silicon Film on Insulator”, Feng Liu, M. Huang, P. Rugheimer, D. E. Savage, and M. G. Lagally, Phys. Rev. Lett. 89, 136101 (2002). Featured in Nature Materials Research Highlights (October, 2002). Selected for Virtual J. of Nanoscale Sci. & Tech., 6(12), 2002. (pdf)
“Nanomechanics: Response of a Strained Semiconductor Structure”, Feng Liu, P. Rugheimer, E. Mateeva, D. E. Savage, and M. G. Lagally, Nature 416, 498 (2002). Selected for Virtual J. of Nanoscale Sci. & Tech., 5(15), 2002. (pdf)
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