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Publications |
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- “Self-organization of semiconductor quantum wires via step-flow growth of strained films”, Feng Liu and Lugang Bai, in Encyclopedia of Nanoscience and Nanotechnology”, American Scientific Publisher, (in preparation). (chapter)
- “MD simulation of structural and mechanical transformation of single-walled carbon nanotubes under pressure”, J. Zang, O. Aldás-Palacios and Feng Liu, Commun. Comput. Phys., 2, 451 (2007) (review)
- “Directed Self-assembly of Quantum Dots by Local Chemical Potential control via Strain Engineering on Patterned Substrates”, Hangyao Wang, Feng Liu, and M. Lagally, in “"Lateral alignment of epitaxial quantum dots",” Springer, (in press, chapter).
- “Modeling and Simulation of Strain-Mediated Nanostructure Formation on Surface”, Feng Liu, in “Handbook of Theoretical and Computational Nanotechnology”, eds. M. Rieth and W. Schommers, 4, Chapter 10, 577-625(2006) (chapter).
- “Quantitative Prediction of Critical Size for the Formation of Semiconductor Quantum Dots”, G.H. Lu and Feng Liu, in “Physics, J. Chinese Phys. Association”, 35, 447 (2006).
- “Computational R&D for Industrial Applications”, Feng Liu, News Article of Center for High-Performance Computing, University of Utah, Fall issue, p. 1 (2005).
- “The Effect of Island-island Interaction on Coarsening of Strained Islands”, Feng Liu, Jpn. J. Appl. Phys., 42, No. 7B (2003). (review) (pdf)
- “Reconstruction of Si(001), (111), and (110) Surfaces”, V. Zielasek, Feng Liu, and M.G. Lagally, in “Properties of Crystalline Silicon”, the EMIS (Electronic Material Information Service) Datareviews, ed. R. Hull, Ch.5.1 (2000) (chapter).
- "Vicinal Si(001) and Si(111) Surfaces",V. Zielasek, F. Liu, and M.G. Lagally, in " Properties of Crystalline Silicon," EMIS (Electronic Material Information Service) Datareviews, ed. R. Hull, Ch.5.2 (2000) (chapter).
- “Strain, Morphology, and Self-organization in the Growth of Si/Ge Quantum Dot Nanoclusters”, Arthur R. Woll, J. Sullivan, Feng Liu, and Max G. lagally, in “ Cluster and Nanostructure Interfaces”, ed. P. Jena, S.N. Khanna, and B.K. Rao, 631-638 (World Scientific, 2000). (paper).
- “Strain Engineering of Nanoscale Structures in the Ge/Si system”, Feng Liu and M.G. Lagally, in “Precision Science and Technology for Perfect Surfaces”, eds. Y. Furukawa, Y. Mori, and T. Kataoka, Proceedings of the 9th International Conference on Production Engineering(ICPE9), Publication Series No. 3, Japan Society for Precision Engineering, Tokyo, Japan, 648 (1999). (paper).
- “Surfaces and Interfaces, Structure of”, Feng Liu, M. Hohage, and M.G. Lagally, Encyclopedia of Appl. Phys., eds. H. Immergut and G. Trigg, Supplement Volume, 321-352 (1999) (chapter). (pdf)
- “Fundamental Crystal Growth Mechanisms”, D.E. Savage, Feng Liu, V. Zielasek, and M.G. Lagally, in “Semiconductors and Semimetals”, eds. J.C. Bean and R. Hull, Academic Press, 56, 49 (1999) (chapter).
- “Strain-Induced Self-organization of Steps and Islands in SiGe/Si Multilayer Films”, Feng Liu and M.G. Lagally, Metallurgical and Materials Transactions, 29A, 2111 (1998). (review).
- “Self-organized Nanoscale Structures in Si/Ge Films”, Feng Liu and M.G. Lagally, Proceedings of the 10th Toyota Conference on “Atomic, Molecular, and Electronic Dynamic Processes on Solid Surfaces”, eds. M. Aono and M. Kawai, Surf. Sci. 386, 169 (1997) (review). (pdf)
- “Epitaxial Growth of Si on Si(001)”, Feng Liu and M.G. Lagally, in “The Chemical Physics of Solid Surfaces”, eds. D.A. King and D.P. Woodruff, Elsevier, 8, 258 (1997) (chapter).
- “Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001)”, Feng Liu, Fang Wu, and M.G. Lagally, Chemical Reviews, 97, 1045-1061 (1997) (review). (pdf)
- "Epitaxial Growth: Principles and Applications”, A. Barabasi, M. Krishnamurthy, Feng Liu, and T. Pearsall, MRS Proceedings, Vol. 570 (1999). (editor)
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